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PbSe thin films were electrodeposited onto ITO substrate with variation of deposition voltage (1-5V). The deposited thin films were characterized using the four point probe technique to determine their electrical properties. The sheet resistivity of the thin films was found to vary from 1.50 x104 (Ωm) to 5.23 x 104(Ωm) and conductivity vary from 1.91 x 10-5 (Ωm)-1 to 7.40x10-5(Ωm)-1, which is within the electrical conductivity range for semiconductor. It was observed that as the refractive index of the incident radiation increases the photon energy increases as well. It was noticed that sample N with 168nm thickness recorded the highest value of refractive index which increases from 2.424-2.643 and sample O with 164 nm thickness revealed the highest peak in all the samples deposited. It shows that as the optical conductivity of the incident radiation increases the photon energy increases. It was observed that sample follows the same thread and sample O with 164nm thickness revealed the highest peak in all the samples deposited.